Semiconductor device

ABSTRACT

One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula A x B x C x O x  wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Semiconductor devices are used in a variety of electronic devices. Forexample, thin-film transistor technology can be used in liquid crystaldisplay (LCD) screens. Some types of thin-film transistors haverelatively slow switching speeds because of low carrier mobility. Insome applications, such as LCD screens, use of thin-film transistorswith relatively slow switching speeds can make it difficult toaccurately render motion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1F illustrate various embodiments of a semiconductor device,such as a thin-film transistor.

FIG. 2 illustrates a cross-sectional schematic of an embodiment of athin-film transistor.

FIG. 3 illustrates a method embodiment for manufacturing an embodimentof a thin-film transistor.

FIG. 4 illustrates an embodiment of an active matrix display area.

DETAILED DESCRIPTION

The exemplary embodiments of the present disclosure includesemiconductor devices, such as transistors that contain multicomponentoxide semiconductors. Additionally, exemplary embodiments of thedisclosure account for the properties possessed by transistors thatcontain multicomponent oxide semiconductors, e.g. optical transparency,and electrical performance. Exemplary embodiments include semiconductordevices that contain a multicomponent channel including at least onemetal cation from group 12, at least one metal cation from group 13, andat least one metal cation from group 14 to form various three, four,five, six, and seven-component oxide semiconductor films. In some of theexemplary embodiments, the channel can include a multicomponent oxidethat can include an amorphous form, a single-phase crystalline state, ora mixed-phase crystalline state. As used herein, the termsmulticomponent oxide, and multicomponent oxide material, are intended tomean oxide material systems that can include two, three, four, five, sixand seven-component oxide materials formed from metal cations of group12 (IIB of the CAS), metal cations of group 13 (group IIIA of the CAS),and metal cations of group 14 (group IVA of the CAS) of the periodictable of the elements.

Unless otherwise indicated, all numbers expressing quantities ofingredients, reaction conditions, and so forth used in the specificationand claims are to be understood as being modified in all instances bythe term “about.” Accordingly, unless indicated to the contrary, thenumerical parameters set forth in the following specification andattached claims are approximations that may vary depending upon thedesired properties sought to be obtained by the present disclosure. Atthe very least, and not as an attempt to limit the application of thedoctrine of equivalents to the scope of the claims, each numericalparameter should at least be construed in light of the number ofreported significant digits and by applying ordinary roundingtechniques.

It should be understood that the various transistor structures may beemployed in connection with the various embodiments of the presentdisclosure, i.e., field effect transistors including thin-filmtransistors, active matrix displays, logic inverters, and amplifiers.FIGS. 1A-1F illustrate exemplary thin-film transistor embodiments. Thethin-film transistors can be of any type, including but not limited to,horizontal, vertical, coplanar electrode, staggered electrode, top-gate,bottom-gate, single-gate, and double-gate, to name a few.

As used herein, a coplanar electrode configuration is intended to mean atransistor structure where the source and drain electrodes arepositioned on the same side of the channel as the gate electrode. Astaggered electrode configuration is intended to mean a transistorstructure where the source and drain electrodes are positioned on theopposite side of the channel as the gate electrode.

FIGS. 1A and 1B illustrate embodiments of bottom-gate transistors, FIGS.1C and 1D illustrate embodiments of top-gate transistors, and FIGS. 1Eand 1F illustrate embodiments of double-gate transistors. In each ofFIGS. 1A-1D, the transistors include a substrate 102, a gate electrode104, a gate dielectric 106, a channel 108, a source electrode 110, and adrain electrode 112. In each of FIGS. 1A-1D, the gate dielectric 106 ispositioned between the gate electrode 104 and the source and drainelectrodes 110, 112 such that the gate dielectric 106 physicallyseparates the gate electrode 104 from the source and the drainelectrodes 110, 112. Additionally, in each of the FIGS. 1A-1D, thesource and the drain electrodes 110, 112 are separately positionedthereby forming a region between the source and drain electrodes 110,112 for interposing the channel 108. Thus, in each of FIGS. 1A-1D, thegate dielectric 106 is positioned adjacent the channel 108, andphysically separates the source and drain electrodes 110,112 from thegate electrode 104. Additionally, in each of the FIGS. 1A-1D, thechannel 108 is positioned adjacent the gate dielectric 106 and isinterposed between the source and drain electrodes 110, 112.

In various embodiments, such as in the double-gate embodiments shown inFIGS. 1E and 1F, two gate electrodes 104-1, 104-2 and two gatedielectrics 106-1, 106-2 are illustrated. In such embodiments, thepositioning of the gate dielectrics 106-1, 106-2 relative to the channel108 and the source and drain electrodes 110, 112, and the positioning ofthe gate electrodes 104-1, 104-2 relative to the gate dielectrics 106-1,106-2 follow the same positioning convention described above where onegate dielectric and one gate electrode are illustrated. That is, thegate dielectrics 106-1, 106-2 are positioned between the gate electrodes104-1, 104-2 and the source and drain electrodes 110, 112 such that thegate dielectrics 106-1, 106-2 physically separate the gate electrodes104-1, 104-2 from the source and the drain electrodes 110, 112.

In each of FIGS. 1A-1F, the channel 108 interposed between the sourceand the drain electrodes 110, 112 provide a controllable electricpathway between the source and drain electrodes 110, 112 such that whena voltage is applied to the gate electrode 104, an electrical charge canmove between the source and drain electrodes 110, 112 via the channel108. The voltage applied at the gate electrode 104 can vary the abilityof the channel 108 to conduct the electrical charge and thus, theelectrical properties of the channel 108 can be controlled, at least inpart, through the application of a voltage at the gate electrode 104.

A more detailed description of an embodiment of a thin-film transistoris illustrated in FIG. 2. FIG. 2 illustrates a cross-sectional view ofan exemplary bottom gate thin-film transistor 200. It will beappreciated that the different layers of the thin-film transistordescribed in FIG. 2, the materials in which they constitute, and themethods in which they are formed can be equally applicable to any of thetransistor embodiments described herein, including those described inconnection with FIGS. 1A-1F. Moreover, in the various embodiments, thethin-film transistor 200 can be included in a number of devicesincluding an active matrix display screen device, a logic inverter, andan amplifier. The thin-film transistor 200 can also be included in aninfrared device, where transparent components are also used.

As shown in FIG. 2, the thin-film transistor 200 can include a substrate202, a gate electrode 204 positioned adjacent the substrate 202, a gatedielectric 206 positioned adjacent the gate electrode 204, and a channel208 positioned between the gate dielectric 206, a source electrode 210,and a drain electrode 212. In the embodiment shown in FIG. 2, thesubstrate 202 includes glass. However, substrate 202 can include anysuitable substrate material or composition for implementing the variousembodiments.

The substrate 202 illustrated in FIG. 2 includes a blanket coating ofITO, i.e., indium-tin oxide to form the gate electrode 204 layer.However, any number of materials can be used for the gate electrode 204.Such materials can include transparent materials such as an n-type dopedIn₂O₃, SnO₂, or ZnO, and the like. Other suitable materials includemetals such as In, Sn, Ga, Zn, Al, Ti, Ag, Cu, and the like. In theembodiment illustrated in FIG. 2, the thickness of the gate electrode204 is approximately 200 nm. The thickness of a gate electrode layer canvary depending on the materials used, device type, and other factors.

The gate dielectric 206 shown in FIG. 2 is also blanket coated. Althoughthe gate electrode 204 and gate dielectric 206 are shown as blanketcoated, unpatterned layers in FIG. 2, they can be patterned. In thevarious embodiments, the gate dielectric layer 206 can include variouslayers of different materials having insulating propertiesrepresentative of gate dielectrics. Such materials can include tantalumpentoxide (Ta₂O₅), Strontium Titanate (ST), Barium Strontium Titanate(BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT)and Bismuth Zirconium Titanate (BZT), silicon dioxide (SiO₂), siliconnitride (Si₃N₄), magnesium oxide (MgO), aluminum oxide (Al₂O₃),hafnium(IV)oxide (HfO₂), zirconium(IV)oxide (ZrO₂), various organicdielectric material, and the like.

In various embodiments, the gate dielectric 206 may be deposited by alow-pressure CVD process using Ta(OC₂H₅)₅ and O₂ at about 430° C., andmay be subsequently annealed in order to reduce leakage currentcharacteristics. Other methods for introducing the gate dielectric layercan include various CVD and sputtering techniques and atomic layerdeposition, evaporation, and the like as will be described in moredetail herein.

In the various embodiments, the source electrode 210 and the drainelectrode 212 are separately positioned adjacent the gate dielectric206. In the embodiment shown in FIG. 2, the source and drain electrodes210, 212 can be formed from the same materials as those discussed inregards to the gate electrode 204. In FIG. 2, the source and drainelectrodes 210, 212 have a thickness of approximately 200 nm. However,the thickness can vary depending on composition of material used,application in which the material will be used, and other factors. Thechoice of source and drain electrode material can vary depending on theapplication, device, system, etc., in which they will be used. Overalldevice performance is likely to vary depending on the source and drainmaterials. For example, in devices where a substantially transparentthin-film transistor is desired, the materials for the source, drain,and gate electrodes can be chosen for that effect.

In the various embodiments, the channel 208 can be formed from amulticomponent oxide material that includes three, four, five, six, andseven-component oxides that include metal cations from group 12, metalcations from group 13, and metal cations from group 14 of the periodictable of elements. As used herein, a multicomponent oxide is intended tomean a three, four, five, six, and seven-component oxide, with eachcomponent being different, and each multicomponent oxide having at leastone metal cation from group 12, at least one metal cation from group 13,and at least one metal cation from group 14. Thus, a three-componentoxide can include three metal cations, one from group 12, one from group13, and one from group 14. Additionally, a four-component oxide caninclude four metal cations, each metal cation being different, andincluding at least one metal cation from each of groups 12, 13, and 14.

In the various embodiments, the channel can be described as includingone or more compounds of a formula. In the various embodiments, theformula can be characterized by a series of letters that can include A,B, C, D, E, F, G (representing cations as described herein), and O(atomic oxygen). A formula can also be characterized by a subscript x,e.g. A_(x). In a formula, the letters, other than O, are intended todenote the identity of the metal cation selected from a defined group,and the subscripts are intended to denote the number of atoms of themetal cation selected from the defined group. For example, if Arepresents the metal cation Zn, and x represents the number 2, thenA_(x) can include Zn₂, e.g., two atoms of Zn.

Additionally, the letter O denotes atomic oxygen as characterized by thesymbol O on the periodic table of the elements. Thus, depending on thestoichiometry of a compound derived from a formula, the subscript of O,i.e., O_(x), in the formula can vary depending on the number of atoms ofmetal cations included in any given formula. For example, the formulaA_(x)B_(x)C_(x)O_(x) can include the quaternary metal oxide:zinc-gallium-lead oxide.

In the formulas described herein, at least one metal cation from each ofgroups 12, 13, and 14 are included in the multicomponent oxide material.For example, the formula A_(x)B_(x)C_(x)O_(x) can include a variety ofthree-component oxides formed from the selection of at least one metalcation from group 12, at least metal cation from group 13, and at leastone metal cation from group 14. Thus, in a multicomponent oxide havingthree, four, five, six, or seven components, at least one metal cationfrom each of groups 12, 13, and 14 are included. Additionally, whereembodiments include formulas for three, four, five, six, orseven-component oxides, the metal cations defined by a given formula canbe further defined in other formulas. Thus, where a three-componentoxide of the formula A_(x)B_(x)C_(x)O_(x) is defined by certain metalcations, a four-component oxide of the formula A_(x)B_(x)C_(x)D_(x)O_(x)can be defined by the same metal cations defined in the formulaA_(x)B_(x)C_(x)O_(x) and can be further defined by other metal cations.For example, in a four-component oxide of formulaA_(x)B_(x)C_(x)D_(x)O_(x), the A_(x), B_(x) and C_(x) can be defined bythe same metal cations defined in the formula A_(x)B_(x)C_(x)O_(x),however the B_(x) of the four-component oxide formula can further bedefined by other metal cations depending on the embodiment in which itis described. Additionally, a selected metal cation in any given formulais included once. That is, in the formula, A_(x)B_(x)C_(x)O_(x) if A isselected to be zinc, then neither B nor C can include zinc.

In various embodiments, the channel 208 can be formed from amulticomponent oxide material that includes one or more compounds of theformula A_(x)B_(x)C_(x)O_(x), wherein each A can be selected from thegroup of Zn, Cd, each B can be selected from the group Ga, In, each Ccan be selected from the group of Ge, Sn, Pb, each O can be atomicoxygen, each x can be independently a non-zero integer, and each of A,B, and C are different. That is, the value of “x” for each of theconstituent elements may be different. For example, selecting metalcations according to the formula A_(x)B_(x)C_(x)O_(x), twelvethree-component oxides can be formed. In these embodiments, the one ormore compounds of the formula A_(x)B_(x)C_(x)O_(x) can include an atomiccomposition having a ratio A:B:C, wherein A, B, and C, are eachdifferent and are each in a range of about 0.025 to about 0.95. Thus,according to this embodiment, A can include Zn or Cd, B can include Gaor In, and C can include Ge, Sn, or Pb. Selecting cations according tothis embodiment, one of the twelve three-component oxides can include azinc-gallium-germanium oxide having an atomic composition ratio, nearends of range, of about 0.025 zinc, 0.025 gallium, and 0.95 germanium orabout 0.95 zinc, 0.025 gallium, and 0.025 germanium or about 0.025 zinc,0.95 gallium, 0.025 germanium or ratios of zinc/gallium/germanium inbetween the ratio near the ends of the range. Thus, in theseembodiments, the channel can include various three-component oxidesemiconductor films having a variety of atomic composition ratios withthe relative concentration of each component falling within the range ofabout 0.025 to about 0.95.

In various embodiments, the channel 208 can be formed from amulticomponent oxide material that includes one or more compounds of theformula A_(x)B_(x)C_(x)D_(x)O_(x). In such embodiments, each D can beselected from the group Zn, Cd, Ga, In, Ge, Sn, Pb, each O can be atomicoxygen, each x can be independently a non-zero integer, and each of A,B, C, and D are different. That is, the value of “x” for each of theconstituent elements may be different. In these embodiments, accordingto the formula A_(x)B_(x)C_(x)D_(x)O_(x) numerous four-component oxidescan be formed. Further, in these embodiments, the one or more compoundsof the formula A_(x)B_(x)C_(x)D_(x)O_(x) can include an atomiccomposition of ratio A:B:C:D, wherein A, B, C, and D, are each in arange of about 0.017 to about 0.95. Thus, according to this embodiment,A can include Zn or Cd, B can include Ga or In, C can include Ge, Sn, orPb, and D can include Zn, Cd, Ga, In, Ge, Sn, or Pb, Selecting cationsaccording to this embodiment, one of the numerous four-component oxidesthat can be formed is a zinc-gallium-germanium-tin oxide having anatomic composition having a ratio, near ends of range, of about 0.017zinc, 0.017 gallium, 0.017 germanium, and 0.095 tin, or about 0.95 zinc,0.017 gallium, 0.017 germanium, and 0.017 tin or ratios ofzinc/gallium/germanium/tin in between the ratio near the ends of therange. Thus, in these embodiments, the channel can include numerousfour-component oxide semiconductor films having a variety of atomiccomposition ratios with the relative concentration of each componentfalling within the range of about 0.017 to about 0.95.

In various embodiments, the channel 208 can be formed from amulticomponent oxide material that includes one or more compounds of theformula A_(x)B_(x)C_(x)D_(x)E_(x)O_(x). In these embodiments, E can beselected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O can beatomic oxygen, each x can be independently a non-zero integer, and eachof A, B, C, D, and E are different. That is, the value of “x” for eachof the constituent elements may be different. Thus, in theseembodiments, numerous five-component oxides can be formed. Further, inthese embodiments, the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)O_(x) can include an atomic composition havinga ratio A:B:C:D:E, wherein A, B, C, D, and E, are each in a range ofabout 0.013 to about 0.95. Thus, according to these embodiments, A caninclude Zn or Cd, B can include Ga or In, C can include Ge, Sn, or Pb, Dcan include Zn, Cd, Ga, In, Ge, Sn, or Pb and E can include Zn, Cd, Ga,In, Ge, Sn, or Pb. Selecting cations according to these embodiments, oneof the numerous five-component oxides that can be formed is azinc-gallium-germanium-tin-lead oxide having a variety of atomiccomposition ratios. Thus, for example, a zinc-gallium-germanium-tin-leadoxide can include an atomic composition having a ratio, near ends ofrange, of about 0.013 zinc, 0.013 gallium, 0.013 germanium, 0.013 tin,and 0.95 lead or ratios of zinc/gallium/germanium/tin/lead in betweenthe ratio near the ends of the range. That is, in these embodiments, thechannel can include numerous five-component oxide semiconductor filmshaving a variety of atomic composition ratios with the relativeconcentration of each component falling within the range of about 0.013to about 0.95.

In various embodiments, the channel 208 can be formed from amulticomponent oxide material that includes one or more compounds of theformula A_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x). In these embodiments, F canbe selected from the group of Zn, Cd, Gal, In, Ge, Sn, Pb, each O can beatomic oxygen, each x can be independently a non-zero integer, and eachof A, B, C, D, E, and F are different. That is, the value of “x” foreach of the constituent elements may be different. Thus, in thisembodiment, numerous six-component oxides can be formed. Additionally,in these embodiments, the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x) can include an atomic compositionhaving a ratio A:B:C:D:E:F, wherein A, B, C, D, E, and F are each in arange of about 0.01 to about 0.95. Thus, according to these embodiments,A can include Zn or Cd, B can include Ga or In, C can include Ge, Sn, orPb, D can include Zn, Cd, Ga, In, Ge, Sn, or Pb, E can include Zn, Cd,Ga, In, Ge, Sn, or Pb, and F can include Zn, Cd, Ga, In, Ge, Sn, or Pb.Selecting cations according to these embodiments, one of the manysix-component oxides that can be formed is azinc-gallium-indium-germanium-tin-lead oxide having a variety of atomiccomposition ratios. Thus, for example, azinc-gallium-indium-germanium-tin-lead oxide can include an atomiccomposition having a ratio, near ends of a range, of about 0.01 zinc,0.01 gallium, 0.01 indium, 0.01 germanium, 0.01 tin, and 0.95 lead orratios of zinc/gallium/indium/germanium/tin/lead in between the rationear the ends of the range. That is, in these embodiments, the channelcan include many six-component oxide semiconductor films having avariety of atomic composition ratios with the relative concentration ofeach component falling within the range of about 0.01 to about 0.95.

In one embodiment, the channel 208 can be formed from a multicomponentoxide material that includes one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)G_(x)O_(x). In these embodiments, G can beselected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O can beatomic oxygen, each x can be independently a non-zero integer, and eachof A, B, C, D, E, F, and G are different. That is, the value of “x” foreach of the constituent elements may be different. Thus, in thisembodiment, one seven-component oxide can be formed. Additionally, inthis embodiment, the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)G_(x)O_(x) can include an atomiccomposition having a ratio A:B:C:D:E:F:G, wherein A, B, C, D, E, F, andG are each in a range of about 0.0085 to about 0.95. Thus, according tothis embodiment, A can include Zn or Cd, B can include Ga or In, C caninclude Ge, Sn, or Pb, D can include Zn, Cd, Ga, In, Ge, Sn, or Pb, Ecan include Zn, Cd, Ga, In, Ge, Sn, or Pb, F can include Zn, Cd, Ga, In,Ge, Sn, or Pb, and G can include Zn, Cd, Ga, In, Ge, Sn, or Pb.Selecting cations according to this embodiment, one seven-componentoxide can be formed, i.e., azinc-cadmium-gallium-indium-germanium-tin-lead oxide having a variety ofatomic composition ratios. Thus, for example, azinc-cadmium-gallium-indium-germanium-tin-lead oxide can include anatomic composition having a ratio, near ends of range, of about 0.0085zinc, 0.0085 cadmium, 0.0085 gallium, 0.0085 indium, 0.0085 germanium,0.0085 tin, and 0.95 lead or ratios ofzinc/cadmium/gallium/indium/germanium/tin/lead between the ratio nearthe ends of the range. That is, in these embodiments, the channel caninclude one seven-component oxide semiconductor film having a variety ofatomic composition ratios with the relative concentration of eachcomponent falling within the range of about 0.0085 to about 0.95.

As one of ordinary skill will understand, the atomic composition ratiosof metal cations for any given three, four, five, six, seven-componentoxides are not limited to the ratios in the foregoing embodiments. Invarious embodiments, each of the three, four, five, six, andseven-component oxides can be formed having a variety of atomiccomposition ratios. For example, a three-component oxide can include anatomic composition having a ratio of 0.485 zinc, 0.49 gallium, and 0.025lead, and a six component oxide can include an atomic composition havinga ratio of 0.70 zinc, 0.26 cadmium, 0.01 indium, 0.01 germanium, 0.01tin, 0.01 lead.

In the various embodiments, the multicomponent oxide can include variousmorphologies depending on composition, processing conditions, and otherfactors. The various morphological states can include amorphous states,and polycrystalline states. A polycrystalline state can include asingle-phase crystalline state or a mixed-phase crystalline state.Additionally, in the various embodiments, the source, drain, and gateelectrodes can include a substantially transparent material. By usingsubstantially transparent materials for the source, drain, and gateelectrodes, areas of the thin-film transistor can be transparent to theportion of the electromagnetic spectrum that is visible to the humaneye. In the transistor arts, a person of ordinary skill will appreciatethat devices such as active matrix liquid crystal displays havingdisplay elements (pixels) coupled to thin-film transistors (TFT's)having substantially transparent materials for selecting or addressingthe pixel to be on or off will benefit display performance by allowingmore light to be transmitted through the display.

Referring back to FIG. 2, the channel 208 can be formed from amulticomponent oxide with a channel thickness of about 50 nm, however,in various embodiments the thickness of the channel can vary dependingon a variety of factors including whether the channel material isamorphous or polycrystalline, and the device in which the channel is tobe incorporated.

In this embodiment, the channel 208 is positioned adjacent the gatedielectric 206 and between the source and drain electrodes 210, 212. Anapplied voltage at the gate electrode 204 can facilitate electronaccumulation or depletion in the channel 208. In addition, the appliedvoltage can enhance electron injection from the source electrode 210 tothe channel 208 and electron extraction therefrom by the drain electrode212. In the embodiments of the present disclosure, the channel 208 canallow for on/off operation by controlling current flowing between thedrain electrode 212 and the source electrode 210 using a voltage appliedto the gate electrode 204.

In various embodiments, the channel 208 can include a multicomponentoxide selected from at least one metal cation from group 12, at leastone metal cation from group 13, and at least one metal cation from group14, wherein group 12 metal cations include Zn and Cd, group 13 metalcations can include Ga and In, and group 14 metal cations can includeGe, Sn, and Pb, to form various multicomponent oxides including three,four, five, six and seven-component oxide semiconductor materials.Additionally, in the various embodiments, each component in themulticomponent oxide is different. For example, where a multicomponentoxide includes three metal cations, i.e., a three-component oxide, thesame two cations will not be included in the multicomponent oxide, thus,if gallium is included in the three-component oxide, gallium will not beincluded as a second or third component of the three-component oxide. Inanother example, if indium is a component of a four-component oxide, theother three-components of the four-component oxide will not includeindium.

These atomic compositions do not take into consideration the optionalpresence of oxygen and other elements. They are merely a representationof the selection of cations for the multicomponent oxide material usedfor the channel of a thin-film transistor. The multicomponent oxides, asdescribed herein, are expected to provide very satisfactory electricalperformance, specifically in the area of channel mobility. Asappreciated by one skilled in the art, mobility is a characteristic thatcan help in determining thin-film transistor performance, as maximumoperating frequency, speed, and drive current increase in directproportion to channel mobility. In addition, the channel can betransparent in both the visible and infrared spectrums, allowing for anentire thin-film transistor to be optically transparent throughout thevisible region of the electromagnetic spectrum.

The use of the multicomponent oxide illustrated in the embodiments ofthe present disclosure is beneficial for a wide variety of thin-filmapplications in integrated circuit structures. For example, suchapplications include transistors, as discussed herein, such as thin-filmtransistors, horizontal, vertical, coplanar electrode, staggeredelectrode, top-gate, bottom-gate, single-gate, and double-gate, to namea few. In the various embodiments, transistors (e.g.,thin-film-transistors) of the present disclosure can be provided asswitches or amplifiers, where applied voltages to the gate electrodes ofthe transistors can affect a flow of electrons through the channel. Asone of ordinary skill will appreciate, transistors can operate in avariety of ways. For example, when a transistor is used as a switch, thetransistor can operate in the saturation region, and where a transistoris used as an amplifier, the transistor can operate in the linearregion. In addition, the use of transistors incorporating channels of amulticomponent oxide in integrated circuits and structures incorporatingintegrated circuits such as visual display panels (e.g., active matrixLCD displays) such as that shown and described in connection with FIG. 4below. In display applications and other applications, it will often bedesirable to fabricate one or more of the remaining thin-film transistorlayers, e.g., source, drain, and gate electrodes, to be at leastpartially transparent.

In FIG. 2, the source electrode 210 and the drain electrode 212 includean ITO layer having a thickness of about 200 nm. In the variousembodiments however, the thickness can vary depending on a variety offactors including type of materials, applications, and other factors. Invarious embodiments, the source and drain electrodes 210, 212, mayinclude a transparent conductor, such as an n-type doped wide-bandgapsemiconductor. Examples include, but are not limited to, n-type dopedIn₂O₃, SnO₂, indium-tin oxide (ITO), or ZnO, and the like. The sourceand drain electrodes 210, 212 may also include a metal such as In, Sn,Ga, Zn, Al, Ti, Ag, Cu, Au, Pt, W, or Ni, and the like. In the variousembodiments of the present disclosure, all of the electrodes 204, 210,and 212 may include transparent materials such that the variousembodiments of the transistors may be made substantially transparent.

The various layers of the transistor structures described herein can beformed using a variety of techniques. For example, the gate dielectric206 may be deposited by a low-pressure CVD process using Ta(OC₂H₅)₅ andO₂ at about 430° C., and may be subsequently annealed in order to reduceleakage current characteristics. Thin-film deposition techniques such asevaporation (e.g., thermal, e-beam), physical vapor deposition (PVD)(e.g., dc reactive sputtering, rf magnetron sputtering, ion beamsputtering), chemical vapor deposition (CVD), atomic layer deposition(ALD), pulsed laser deposition (PLD), molecular beam epitaxy (MBE), andthe like may be employed. Additionally, alternate methods may also beemployed for depositing the various transistor layers of the embodimentsof the present disclosure. Such alternate methods can includeanodization (electrochemical oxidation) of a metal film, as well asdeposition from a liquid precursor such as spin coating and ink-jetprinting including thermal and piezoelectric drop-on-demand printing.Film patterning may employ photolithography combined with etching orlift-off processes, or may use alternate techniques such as shadowmasking. Doping of one or more of the layers (e.g., the channelillustrated in FIG. 2) may also be accomplished by the introduction ofoxygen vacancies and/or substitution of aliovalent elements.

Embodiments of the present disclosure also include methods of formingmetal containing films on a surface of a substrate or substrateassembly, such as a silicon wafer, with or without layers or structuresformed thereon, used in forming integrated circuits, and in particularthin-film transistors as described herein. It is to be understood thatmethods of the present disclosure are not limited to deposition onsilicon wafers; rather, other types of wafers (e.g., gallium arsenide,glass, etc.) can be used as well.

Furthermore, other substrates can also be used in methods of the presentdisclosure. These include, for example, fibers, wires, etc. In general,the films can be formed directly on the lowest surface of the substrate,or they can be formed on any of a variety of the layers (i.e., surfaces)as in a patterned wafer, for example.

In FIG. 3, a method for fabricating a semiconductor structure isillustrated. In the various embodiments of the present disclosure, asubstrate or substrate assembly can be provided in forming thesemiconductor structure. As used herein, the term “substrate” refers tothe base substrate material layer, e.g., the lowest layer of glassmaterial in a glass wafer. The term “substrate assembly” refers to thesubstrate having one or more layers or structures formed thereon.Examples of substrate types include, but are not limited to, glass,plastic, and metal, and include such physical forms as sheets, films,and coatings, among others, and may be opaque or substantiallytransparent.

In block 310, a drain electrode and a source electrode can both beprovided. For example, both the drain electrode and the source electrodecan be provided on the substrate of substrate assembly.

In the various embodiments, precursor compounds are described as metals,oxides of metals, multicomponent oxides, and formulas having letters andsubscripts. In formulas, the letters, e.g., A, are intended to denote ametal cation selected from a defined group and the subscripts, e.g., x,are intended to denote the number of atoms of the metal cation selectedfrom the defined group. Additionally, a compound as used herein caninclude three or more elements including metal cations from groups 12,13, and 14, and oxygen. The precursor compounds described herein do notindicate the presence of O_(x), however, as one of ordinary skill willunderstand the precursor compounds can also include oxygen to providethe oxide of the compound. The below described method is not intended tolimit the compounds by excluding oxygen. As one of ordinary skill willunderstand, oxygen can be included in the precursor compounds in thevarious deposition techniques described herein.

Various combinations of the precursor compounds described herein can beused in a precursor composition. Thus, as used herein, a “precursorcomposition” refers to a solid or liquid that includes one or moreprecursor compounds described herein optionally mixed with one or moreprecursor compounds other than those described herein. For example, zincprecursor compounds and lead precursor compounds can be provided in oneprecursor composition or in separate compositions. Where they areincluded in separate compositions, both precursor compositions areincluded when a channel is deposited.

In block 320, a channel contacting the drain electrode and the sourceelectrode, and including a multicomponent oxide, can be deposited. Forexample, the channel can be deposited between the drain electrode and asource electrode so as to electrically couple the two electrodes. In thevarious embodiments, depositing the channel contacting the drainelectrode and the source electrode can include providing at least oneprecursor composition including one or more precursor compounds thatinclude A_(x), one or more compounds that include B_(x), and one or morecompounds that include C_(x), are provided. In these embodiments, each Acan be selected from the group of Zn, Cd, each B can be selected fromthe group of Ga, In, each C can be selected from the group Ge, Sn, Pb,each x is independently a non-zero integer, and wherein each of A, B,and C are different. That is, the value of “x” for each of theconstituent elements may be different. Thus, in these embodiments,twelve three-component oxides can be formed. For example, zinc precursorcompounds, gallium precursor compounds, and lead precursor compounds canbe provided in one precursor composition or in separate compositions. Inany event, at least one metal cation from a group defined by A, at leastone metal cation from a group defined by B, and at least one metalcation from a group defined by C can be provided to form a precursorcomposition of one or more compounds of A_(x), B_(x), and C_(x).

In the various embodiments, the precursor composition can furtherinclude one or more precursor compounds that include D_(x). In theseembodiments, each D can be selected from the group of Zn, Cd, Ga, In,Ge, Sn, Pb, each x is independently a non-zero integer, and wherein eachof A, B, C, and D are different. That is, the value of “x” for each ofthe constituent elements may be different. Thus, in these embodiments,numerous four-component oxides can be formed. For example, zincprecursor compounds, gallium precursor compounds, tin precursorcompounds, and lead precursor compounds can be provided in one precursorcomposition or in separate compositions. In each case however, at leastone metal cation from groups defined by A, B, C, and D can be providedto form one or more precursor compositions of one or more compounds ofA_(x), B_(x), C_(x), and D_(x).

In various embodiments, the precursor composition can further includeone or more precursor compounds that include E_(x). In such embodiments,each E can be selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb,each x is independently a non-zero integer, and wherein each of A, B, C,D, and E are different. That is, the value of “x” for each of theconstituent elements may be different. Thus, in these embodiments,numerous five-component oxides can be formed. For example, zincprecursor compounds, gallium precursor compounds, germanium precursorcompounds, tin precursor compounds, and lead precursor compounds can beprovided in one precursor composition or in separate compositions. Ineach case however, at least one metal cation from groups defined by A,B, C, D, and E can be provided to form one or more precursor compositionof one or more compounds of A_(x), B_(x) C_(x), D_(x) and E_(x).

In various embodiments, the precursor composition can further includeone or more precursor compounds that include F_(x). In such embodiments,F can be selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each xis independently a non-zero integer, and wherein each of A, B, C, D, E,and F are different. That is, the value of “x” for each of theconstituent elements may be different. Thus, in these embodiments,numerous six-component oxides can be formed. For example, zinc precursorcompounds, cadmium precursor compounds, gallium precursor compounds,germanium precursor compounds, tin precursor compounds, and leadprecursor compounds can be provided in one precursor composition or inseparate precursor compositions. In each case however, at least onemetal cation from groups defined by A, B, C, D, E, and F can be providedto form one or more precursor compositions of one or more compounds ofA_(x), B_(x) C_(x), D_(x) E_(x), and F_(x).

In one embodiment, the precursor composition can further include one ormore precursor compounds that include G_(x). In this embodiment, each Gcan be selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb each x isindependently a non-zero integer, and wherein each of A, B, C, D, E, F,and G are different. That is, the value of “x” for each of theconstituent elements may be different. Thus, in this embodiment, oneseven-component oxide can be formed. For example, zinc precursorcompounds, cadmium precursor compounds, gallium precursor compounds,indium precursor compounds, germanium precursor compounds, tin precursorcompounds, and lead precursor compounds can be provided in one precursorcomposition or in separate precursor compositions. In each case however,at least one metal cation from groups defined by A, B, C, D, E, F, and Gcan be provided to form one or more precursor compositions of one ormore compounds of A_(x), B_(x) C_(x), D_(x) E_(x), F_(x), and G_(x).

As used herein, “liquid” refers to a solution or a neat liquid (a liquidat room temperature or a solid at room temperature that melts at anelevated temperature). As used herein, a “solution” does not call forcomplete solubility of the solid; rather, the solution may have someundissolved material, however, there is a sufficient amount of thematerial that can be carried by the organic solvent into the vapor phasefor chemical vapor deposition processing. The precursor compounds asused herein can also include one or more organic solvents suitable foruse in a chemical vapor deposition system, as well as other additives,such as free ligands, that assist in the vaporization of the desiredprecursor compounds.

A wide variety of Zn, Cd, Ga, In, Ge, Sn, and Pb precursor compoundssuitable for thin-film deposition techniques can be used with theembodiments of the present disclosure. Examples of the precursorcompounds include, but are not limited to, the metals and oxides of themetals, including ZnO, ZnO₂, CdO, GaO, Ga₂O, Ga₂O₃, InO, In₂O₃, GeO,GeO₂, SnO, SnO₂, PbO, PbO₂, Pb₂O₃, and Pb₃O₄ precursor compounds.Although specific precursor compounds are illustrated herein, a widevariety of precursor compounds can be used as long as they can be usedin a deposition process. In the various embodiments of the presentdisclosure, the Zn, Cd, Ga, In, Ge, Sn, and Pb precursor compounds caninclude neutral precursor compounds and may be liquids or solids at roomtemperature. If they are solids, they are sufficiently soluble in anorganic solvent to allow for vaporization, they can be vaporized orsublimed, or ablated (e.g., by laser ablation or sputtering) from thesolid state, or they have melting temperatures below their decompositiontemperatures. Thus, many of the precursor compounds described herein aresuitable for use in vapor deposition techniques, such as chemical vapordeposition (CVD) techniques, (e.g., flash vaporization techniques,bubbler techniques, and/or microdroplet techniques).

The precursor compounds described herein can be used in precursorcompositions for ink-jet deposition, sputtering, and vapor depositiontechniques (e.g., chemical vapor deposition (CVD) or atomic layerdeposition (ALD)). Alternatively, certain precursor compounds describedherein can be used in precursor compositions for other depositiontechniques, such as spin-on coating, and the like. Typically, thoseprecursor compounds containing organic R groups with a low number ofcarbon atoms (e.g., 1-4 carbon atoms per R group) are suitable for usewith vapor deposition techniques. Those precursor compounds containingorganic R groups with a higher number of carbon atoms (e.g., 5-12 carbonatoms per R group) are generally suitable for spin-on or dip coating.

As used herein, the term “organic R groups” means a hydrocarbon group(with optional elements other than carbon and hydrogen, such as oxygen,nitrogen, sulfur, and silicon) that is classified as an aliphatic group,cyclic group, or combination of aliphatic and cyclic groups (e.g.,alkaryl and aralkyl groups). In the context of the present disclosure,the organic groups are those that do not interfere with the formation ofa metal-containing film. They may be of a type and size that do notinterfere with the formation of a metal-containing film using chemicalvapor deposition techniques. The term “aliphatic group” means asaturated or unsaturated linear or branched hydrocarbon group. This termis used to encompass alkyl, alkenyl, and alkynyl groups, for example.The term “alkyl group” means a saturated linear or branched hydrocarbongroup including, for example, methyl, ethyl, isopropyl, t-butyl, heptyl,dodecyl, octadecyl, amyl, 2-ethylhexyl, and the like. The term “alkenylgroup” means an unsaturated, linear or branched hydrocarbon group withone or more carbon-carbon double bonds, such as a vinyl group. The term“alkynyl group” means an unsaturated, linear or branched hydrocarbongroup with one or more carbon-carbon triple bonds. The term “cyclicgroup” means a closed ring hydrocarbon group that is classified as analicyclic group, aromatic group, or heterocyclic group. The term“alicyclic group” means a cyclic hydrocarbon group having propertiesresembling those of aliphatic groups. The term “aromatic group” or “arylgroup” means a mono- or polynuclear aromatic hydrocarbon group. The term“heterocyclic group” means a closed ring hydrocarbon in which one ormore of the atoms in the ring is an element other than carbon (e.g.,nitrogen, oxygen, sulfur, etc.).

Still referring to FIG. 3, the channel can be deposited including theprecursor composition to form a multicomponent oxide from the precursorcomposition to electrically couple a drain electrode and a sourceelectrode. In various embodiments, the channel can employ variousphysical vapor deposition techniques, such as dc reactive sputtering, rfsputtering, magnetron sputtering, and ion beam sputtering, Other methodsfor depositing the channel can include using an ink-jet depositiontechnique when the precursor composition includes a liquid form.

In the various embodiments, the multicomponent oxide included in thechannel can have a uniform composition throughout its thickness,although this is not a requisite. For example, in a four-componentoxide, a precursor composition including a precursor compound thatincludes A_(x) can be deposited first and then a combination ofprecursor compounds that include B_(x), C_(x) and D_(x) can be depositedto form a four-component oxide semiconductor film. As will beappreciated, the thickness of the multicomponent oxide channel will bedependent upon the application for which it is used. For example, thethickness can have a range of about 1 nanometer to about 1,000nanometers. In an alternative embodiment, the thickness can have a rangeof about 10 nanometers to about 200 nanometers.

In the embodiments of the present disclosure, the multicomponent oxidematerial can include compounds of at least one metal cation from group12, at least one metal cation from group 13, and at least one metalcation from group 14, wherein group 12 cations include Zn and Cd, group13 cations include Ga and In, and group 14 cations include Ge, Sn, andPb. The group 12, group 13, and group 14 metal cations are typicallymononuclear (i.e., monomers in that they contain one metal permolecule), although weakly bound dimers (i.e., dimers containing twomonomers weakly bonded together through hydrogen or dative bonds) arealso possible. In additional embodiments of the present disclosure, theprecursor compounds used for forming the multicomponent oxide caninclude organometallic compounds suitable for vapor deposition such aszinc acethylacetonate [Zn(C₅H₇O₂)₂] and gallium acethylacetonate[Ga(C₅H₇O₂)₃].

As discussed herein, the precursor compounds used for forming themulticomponent oxide channel in a sputtering process in the embodimentsof the present disclosure can include three, four, five, six andseven-component oxides. For example, a three-component oxide such aszinc-gallium-lead oxide can be used as a target to form the channel. Thezinc-gallium-lead oxide can be deposited in a thin-film by sputtering byuse of the above-mentioned target and a single-phase crystalline statefor the channel can be obtained. In the various embodiments, thesingle-phase crystalline state can include precursor compounds includingA_(x), B_(x) and C_(x), wherein A includes Zn, a group 12 metal cation,B includes Ga, a group 13 metal cation, and C includes Pb, a group 14metal cation. of the following formula:Zn_(x)Ga_(2y)Pb_(z)O_(x+3y+2z)In this embodiment, the values of x and y can be found in given ranges.For example, each x can be independently in a range of about 1 to about15, a range of about 2 to about 10, integer values greater than 1, andinteger values less than 15. Specific examples of the values of xinclude 2, 1, and 1, respectively, where the single-phase crystallinestate of the zinc-gallium-lead oxide includes Zn₂Ga₂PbO₇.

Alternatively, embodiments of the zinc-gallium-lead oxide can exhibit amixed-phase crystalline state resulting from sputtering by use of theabove-mentioned target. For example, the mixed-phase crystalline statecan include, but is not limited to, three or more phases that caninclude, for example, ZnO, Zn₂Ga₂PbO7, and PbO₂, with a range ofphase-to-phase ratio A:B:C (e.g., ZnO: Zn₂Ga₂PbO7: PbO₂), where A, B,and C, are each in the range of about 0.01 to about 0.98.

Additionally, the compounds of the group 12, group 13, and group 14cations can be expected to exhibit excellent electron transport in theamorphous state. As such, a desirable level of performance can beachieved without crystallization of the multicomponent oxide. Thus, invarious embodiments, the zinc-gallium-lead oxide can have asubstantially amorphous form. For example, the zinc-gallium-lead oxidecan include an atomic composition of zinc(x):gallium(y):lead(z), wherex+y+z=1, and each of the x, y, and z are each in the range of about 0.01to about 0.98. This atomic composition does not take into considerationthe optional presence of oxygen and other elements. It is merely arepresentation of the relative ratio of zinc, gallium, and lead. In anadditional embodiment, x, y, and z can each be in the range of about 0.1to about 0.8, and in the range of about 0.05 to about 0.90.

Additionally, since each of these multicomponent oxide materials isbased on combination of groups 12, 13, and 14 cations, a substantialdegree of qualitative similarity is expected in structural andelectrical properties, and in processing considerations. Furthermore,zinc-indium, and zinc-tin oxide, both of which contain some of theconstituents of the multicomponent oxides disclosed herein have beenshown to exhibit excellent electron transport and thus, qualitativelysimilar performance from the multicomponent oxides can be expected. Anexample of the electron transport characteristics of the zinc-tin oxidecan be found in co-pending U.S. Patent Application Ser. No. 60/490,239entitled “SEMICONDUCTOR DEVICE” filed on Jul. 25, 2003.

Sputtering or chemical vapor deposition processes can be carried out inan atmosphere of inert gas and/or a reaction gas to form a relativelypure multicomponent oxide channel. The inert gas is typically selectedfrom the group including nitrogen, helium, argon, and mixtures thereof.In the context of the present disclosure, the inert gas is one that isgenerally unreactive with the precursor compounds described herein anddoes not interfere with the formation of a multicomponent oxide channel.

The reaction gas can be selected from a wide variety of gases reactivewith the precursor compounds described herein, at least at a surfaceunder the conditions of deposition. Examples of reaction gases includehydrogen and oxidizing gases such as O₂. Various combinations of carriergases and/or reaction gases can be used in the embodiments of thepresent disclosure to form the multicomponent oxide channel.

For example, in a sputtering process for the multicomponent oxidechannel, the process may be performed by using a mixture of argon andoxygen as the sputtering gas at a particular flow rate, with theapplication of an RF power for achieving the desired deposition in asputter deposition chamber. However, it should be readily apparent thatany manner of forming the multicomponent oxide channel is contemplatedin accordance with the present disclosure and is in no manner limited toany particular process, e.g., sputtering, for formation thereof.

In block 330, both a gate electrode and a gate dielectric positionedbetween the gate electrode and the channel can be provided in forming anembodiment of the thin-film transistor of the present disclosure.

The embodiments described herein may be used for fabricating chips,integrated circuits, monolithic devices, semiconductor devices, andmicroelectronic devices, such as display devices. For example, FIG. 4illustrates an embodiment of a display device such as an active-matrixliquid-crystal display (AMLCD) 480. In FIG. 4, the AMLCD 480 can includepixel devices (i.e., liquid crystal elements) 440 in a matrix of adisplay area 460. The pixel devices 440 in the matrix can be coupled tothin-film transistors 400 also located in the display area 460. Thethin-film transistor 400 can include embodiments of the thin-filmtransistors as disclosed herein. Additionally, the AMLCD 480 can includeorthogonal control lines 462 and 464 for supplying an addressable signalvoltage to the thin-film transistors 400 to influence the thin-filmtransistors to turn on and off and control the pixel devices 440, e.g.,to provide an image on the AMLCD 480.

Although specific exemplary embodiments have been illustrated anddescribed herein, those of ordinary skill in the art will appreciatethat an arrangement calculated to achieve the same techniques can besubstituted for the specific exemplary embodiments shown. Thisdisclosure is intended to cover adaptations or variations of theembodiments of the disclosure. It is to be understood that the abovedescription has been made in an illustrative fashion, and not arestrictive one.

Combination of the above exemplary embodiments, and other embodimentsnot specifically described herein will be apparent to those of skill inthe art upon reviewing the above description. The scope of the variousembodiments of the disclosure includes other applications in which theabove structures and methods are used. Therefore, the scope of variousembodiments of the disclosure should be determined with reference to theappended claims, along with the full range of equivalents to which suchclaims are entitled.

In the foregoing Detailed Description, various features are groupedtogether in a single exemplary embodiment for the purpose ofstreamlining the disclosure. This method of disclosure is not to beinterpreted as reflecting an intention that the embodiments of thedisclosure necessitate more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed exemplaryembodiment. Thus, the following claims are hereby incorporated into theDetailed Description, with each claim standing on its own as a separateembodiment.

1. A semiconductor device, comprising: a drain electrode; a sourceelectrode; a channel contacting the drain electrode and the sourceelectrode, wherein the channel includes one or more compounds of theformula A_(x)B_(x)C_(x)O_(x), wherein each A is selected from the groupof Zn, Cd, each B is selected from the group of Ga, In, each C isselected from the group Ge, Sn, Pb, each O is atomic oxygen, each x isindependently a non-zero integer, and each of A, B, and C are different;and a gate dielectric positioned between the gate electrode and thechannel.
 2. The semiconductor device of claim 1, wherein the one or morecompounds of the formula A_(x)B_(x)C_(x)O_(x) includes a ratio of A:B:C,wherein A, B, and C are each in a range of about 0.025 to about 0.95. 3.The semiconductor device of claim 1, wherein the one or more compoundsof the formula A_(x)B_(x)C_(x)O_(x) includes D_(x), to form a compoundof the formula A_(x)B_(x)C_(x)D_(x)O_(x), wherein each D is selectedfrom the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen,each x is independently a non-zero integer, and wherein each of A, B, C,and D are different.
 4. The semiconductor device of claim 3, wherein theone or more compounds of the formula A_(x)B_(x)C_(x)D_(x)O_(x) includesa ratio of A:B:C:D, wherein A, B, C, and D are each in a range of about0.017 to about 0.95.
 5. The semiconductor device of claim 3, wherein theone or more compounds of formula A_(x)B_(x)C_(x)D_(x)O_(x) includesE_(x), to form a compound of the formula A_(x)B_(x)C_(x)D_(x)E_(x)O_(x),wherein each E is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb,each O is atomic oxygen, each x is independently a non-zero integer, andwherein each of A, B, C, D, and E are different.
 6. The semiconductordevice of claim 5, wherein the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)O_(x) includes a ratio of A:B:C:D:E, wherein A,B, C, D, and E are each in a range of about 0.013 to about 0.95.
 7. Thesemiconductor device of claim 5, wherein the one or more compounds offormula A_(x)B_(x)C_(x)D_(x)E_(x)O_(x) includes F_(x), to form acompound of the formula A_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x), whereineach F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each Ois atomic oxygen, each x is independently a non-zero integer, andwherein each of A, B, C, D, E, and F are different.
 8. The semiconductordevice of claim 7, wherein the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x) includes a ratio of A:B:C:D:E:F,wherein A, B, C, D, E, and F are each in a range of about 0.01 to about0.95.
 9. The semiconductor device of claim 7, wherein the one or morecompounds of the formula A_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x) includesG_(x), to form a compound of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)G_(x)O_(x), wherein each G is selectedfrom the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen,each x is independently a non-zero integer, and wherein each of A, B, C,D, E, F, and G are different.
 10. The semiconductor device of claim 9,wherein the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)G_(x)O_(x) includes a ratio ofA:B:C:D:E:F:G, wherein A, B, C, D, E, F, and G are each in a range ofabout 0.0085 to about 0.95.
 11. The semiconductor device of claim 1,wherein the channel includes one of an amorphous form, a single-phasecrystalline form, and a mixed-phase crystalline form.
 12. Asemiconductor device, comprising: a drain electrode; a source electrode;means for a channel to electrically couple the drain electrode and thesource electrode; and a gate electrode separated from the channel by agate dielectric.
 13. The semiconductor device of claim 12, wherein themeans for a channel includes a means for forming one of an amorphousform, a single-phase crystalline form, and a mixed-phase crystallineform.
 14. The semiconductor device of claim 12, wherein the source,drain, and gate electrodes include a substantially transparent material.15. A method of forming a channel, comprising: providing at least oneprecursor composition including one or more precursor compounds thatinclude A_(x), one or more precursor compounds that include B_(x), andone or more precursor compounds that include C_(x), wherein each A isselected from the group of Zn, Cd, each B is selected from the group ofGa, In, each C is selected from the group Ge, Sn, Pb, each x isindependently a non-zero integer, and wherein each of A, B, and C aredifferent; and depositing the channel including the precursorcomposition to form a multicomponent oxide from the precursorcomposition to electrically couple a drain electrode and a sourceelectrode.
 16. The method of claim 15, including providing a substrateor substrate assembly; and forming the semiconductor device on thesubstrate or substrate assembly.
 17. The method of claim 15, whereindepositing the channel includes depositing one of an amorphous form, asingle-phase crystalline form, and a mixed-phase crystalline form. 18.The method of claim 15, wherein the precursor composition includes aliquid form.
 19. The method of claim 18, wherein depositing the channelincludes an ink-jet deposition technique when the precursor compositionincludes the liquid form.
 20. The method of claim 15, wherein the one ormore precursor compounds includes one or more precursor compounds thatinclude D_(x), wherein each D is selected from the group of Zn, Cd, Ga,In, Ge, Sn, Pb each x is independently a non-zero integer, and whereineach of A, B, C, and D are different.
 21. The method of claim 20,wherein the one or more precursor compounds includes one or moreprecursor compounds that include E_(x), wherein each E is selected fromthe group of Zn, Cd, Ga, In, Ge, Sn, Pb each x is independently anon-zero integer, and wherein each of A, B, C, D, and E are different.22. The method of claim 21, wherein the one or more precursor compoundsincludes one or more precursor compounds that include F_(x), whereineach F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb each xis independently a non-zero integer, and wherein each of A, B, C, D, E,and F are different.
 23. The method of claim 22, wherein the one or moreprecursor compounds includes one or more precursor compounds thatinclude G_(x), wherein each G is selected from the group of Zn, Cd, Ga,In, Ge, Sn, Pb, each x is independently a non-zero integer, and whereineach of A, B, C, D, E, F, and G are different.
 24. The method of claim23, wherein depositing a channel includes a step for vaporizing theprecursor composition to form a vaporized precursor composition, anddepositing the vaporized precursor composition using a physical vapordeposition technique including one or more of dc reactive sputtering, rfsputtering, magnetron sputtering, ion beam sputtering.
 25. A method ofmanufacturing a semiconductor device, comprising: providing a drainelectrode; providing a source electrode; a step for providing aprecursor composition including one or more precursor compounds thatinclude A_(x), one or more precursor compounds that include B_(x), andone or more precursor compounds that include C_(x), wherein each A isselected from the group of Zn, Cd, each B is selected from the group ofGa, In, each C is selected from the group Ge, Sn, Pb, each x isindependently a non-zero integer, and wherein each of A, B, and C aredifferent; a step for depositing a channel including depositing theprecursor composition to form a multicomponent oxide from the precursorcomposition to electrically couple the drain electrode and the sourceelectrode; providing a gate electrode; and providing a gate dielectricpositioned between the gate electrode and the channel.
 26. The method ofclaim 25, wherein the step for depositing a channel includes a step forvaporizing the precursor composition to form a vaporized precursorcomposition, and depositing the vaporized precursor composition using aphysical vapor deposition technique including one or more of dc reactivesputtering, rf sputtering, magnetron sputtering, ion beam sputtering.27. The method of claim 25, wherein the step for depositing a channelincludes an ink-jet deposition technique.
 28. The method of claim 25,wherein providing the source, the drain, and the gate electrodesincludes providing a substantially transparent form of the source, thedrain, and the gate electrodes.
 29. The method of claim 25, wherein theone or more precursor compounds includes one or more precursor compoundsthat include D_(x), wherein each D is selected from the group of Zn, Cd,Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, andwherein each of A, B, C, and D are different.
 30. The method of claim29, wherein the one or more precursor compounds includes one or moreprecursor compounds that include E_(x), wherein each E is selected fromthe group of Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently anon-zero integer, and wherein each of A, B, C, D, and E are different.31. The method of claim 30, wherein the one or more precursor compoundsincludes one or more precursor compounds that include F_(x), whereineach F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each xis independently a non-zero integer, and wherein each of A, B, C, D, E,and F are different.
 32. The method of claim 31, wherein the one or moreprecursor compounds includes one or more precursor compounds thatinclude G_(x), wherein each G is selected from the group of Zn, Cd, Ga,In, Ge, Sn, Pb, each x is independently a non-zero integer, and whereineach of A, B, C, D, E, F, and G are different.
 33. A semiconductordevice formed by the steps, comprising: providing a drain electrode;providing a source electrode; providing a precursor compositionincluding one or more precursor compounds that include A_(x), one ormore precursor compounds that include B_(x), and one or more precursorcompounds that include C_(x), wherein each A is selected from the groupof Zn, Cd, each B is selected from the group of Ga, In, each C isselected from the group Ge, Sn, Pb, each x is independently a non-zerointeger, and wherein each of A, B, and C are different; depositing achannel including the precursor composition to form a multicomponentoxide from the precursor composition to electrically couple the drainelectrode and the source electrode; providing a gate electrode; andproviding a gate dielectric positioned between the gate electrode andthe channel.
 34. The semiconductor device of claim 33, wherein the oneor more precursor compounds includes one or more precursor compoundsthat include D_(x), wherein each D is selected from the group of Zn, Cd,Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, andwherein each of A, B, C, and D are different.
 35. The semiconductordevice of claim 34, wherein the one or more precursor compounds includesone or more precursor compounds that include E_(x), wherein each E isselected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each x isindependently a non-zero integer, and wherein each of A, B, C, D, and Eare different.
 36. The semiconductor device of claim 35, wherein the oneor more precursor compounds includes one or more precursor compoundsthat include F_(x), wherein each F is selected from the group of Zn, Cd,Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, andwherein each of A, B, C, D, E, and F are different.
 37. Thesemiconductor device of claim 36, wherein the one or more precursorcompounds includes one or more precursor compounds that include G_(x),wherein each G is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb,each x is independently a non-zero integer, and wherein each of A, B, C,D, E, F, and G are different.
 38. The semiconductor device of claim 37,wherein depositing the channel includes vaporizing the precursorcomposition to form a vaporized precursor composition, and depositingthe vaporized precursor composition using a physical vapor depositiontechnique including one or more of dc reactive sputtering, rfsputtering, magnetron sputtering, ion beam sputtering.
 39. Thesemiconductor device of claim 33, wherein providing the source, thedrain, and the gate electrodes includes providing a substantiallytransparent form of the source, the drain, and the gate electrodes. 40.The semiconductor device of claim 33, wherein providing the precursorcomposition includes providing a liquid form of the precursorcomposition.
 41. The semiconductor device of claim 40, whereindepositing the channel includes an ink-jet deposition technique when theprecursor composition includes the liquid form.
 42. A method foroperating a semiconductor device, comprising: providing a semiconductordevice that includes a source electrode, a drain electrode, and achannel to electrically couple the source electrode and the drainelectrode, a gate electrode separated from the channel by a gatedielectric, wherein the channel includes a multicomponent oxide selectedfrom at least one metal cation from group 12, at least one metal cationfrom group 13, and at least one metal cation from group 14, whereingroup 12 cations include Zn and Cd, group 13 cations include Ga and In,group 14 cations include Ge, Sn, and Pb, wherein each component in themulticomponent oxide is different; and applying a voltage to the gateelectrode to effect a flow of electrons through the channel.
 43. Themethod of claim 42, wherein operating the semiconductor device includesusing the semiconductor device as a switch in a display device.
 44. Themethod of claim 42, wherein operating the semiconductor device includesconducting electrons through the channel in a linear region ofoperation.
 45. A display device, comprising: a plurality of pixeldevices configured to operate collectively to display images, where eachof the pixel devices includes a semiconductor device configured tocontrol light emitted by the pixel device, the semiconductor deviceincluding: a drain electrode; a source electrode; a channel contactingthe drain electrode and the source electrode, wherein the channelincludes one or more compounds of the formula A_(x)B_(x)C_(x)O_(x),wherein each A is selected from the group of Zn, Cd, each B is selectedfrom the group of Ga, In, each C is selected from the group Ge, Sn, Pb,each O is atomic oxygen; each x is independently a non-zero integer, andwherein each of A, B, and C are different; a gate electrode; and a gatedielectric positioned between the gate electrode and the channel andconfigured to permit application of an electric field to the channel.46. The display of claim 45, wherein the one or more compounds of theformula A_(x)B_(x)C_(x)O_(x) includes an atomic composition of ratioA:B:C, wherein A, B, and C are each in a range of about 0.025 to about0.95.
 47. The display of claim 45, wherein the source, the drain, andthe gate electrodes include a substantially transparent material. 48.The display of claim 45, wherein the one or more compounds of theformula A_(x)B_(x)C_(x)O_(x) includes D_(x), to form a compound of theformula A_(x)B_(x)C_(x)D_(x)O_(x), wherein each D is selected from thegroup of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x isindependently a non-zero integer, and wherein each of A, B, C, and D aredifferent.
 49. The display of claim 48, wherein the one or morecompounds of the formula A_(x)B_(x)C_(x)D_(x)O_(x) includes an atomiccomposition of ratio A:B:C:D, wherein A, B, C, and D are each in a rangeof about 0.017 to about 0.95.
 50. The display of claim 48, wherein theone or more compounds of formula A_(x)B_(x)C_(x)D_(x)O_(x) includesE_(x) to form a compound of the formula A_(x)B_(x)C_(x)D_(x)E_(x)O_(x),wherein each E is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb,each 0 is atomic oxygen, each x is independently a non-zero integer, andwherein each of A, B, C, D, and E are different.
 51. The display ofclaim 50, wherein the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)O_(x) includes an atomic composition of ratioA:B:C:D:E, wherein A, B, C, D, and E are each in a range of about 0.013to about 0.95.
 52. The display of claim 50, wherein the one or morecompounds of formula A_(x)B_(x)C_(x)D_(x)E_(x)O_(x) includes F_(x) toform a compound of the formula A_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x),wherein each F is selected from the group of Zn, Cd, Ga, In, Ge, Sn, Pb,each O is atomic oxygen, each x is independently a non-zero integer, andwherein each of A, B, C, D, E, and F are different.
 53. The display ofclaim 52, wherein the one or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x) includes an atomic composition ofratio A:B:C:D:E:F, wherein A, B, C, D, E, and F are each in a range ofabout 0.01 to about 0.95.
 54. The display of claim 52, wherein the oneor more compounds of the formula A_(x)B_(x)C_(x)D_(x)E_(x)F_(x)O_(x),includes G_(x) to form a compound of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)G_(x)O_(x), wherein each G is selectedfrom the group of Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen,each x is independently a non-zero integer, and wherein each of A, B, C,D, E, F, and G are different.
 55. The display of claim 54, wherein theone or more compounds of the formulaA_(x)B_(x)C_(x)D_(x)E_(x)F_(x)G_(x)O_(x) includes an atomic compositionof ratio A:B:C:D:E:F:G, wherein A, B, C, D, E, F, and G are each in arange of about 0.0085 to about 0.95.
 56. The display of claim 56,wherein the channel includes one of an amorphous form, a single-phasecrystalline form, and a mixed-phase crystalline form.
 57. Asemiconductor device, comprising: a drain electrode; a source electrode;a channel contacting the drain electrode and the source electrode,wherein the channel includes one or more of a metal oxide includingzinc-gallium-germanium, zinc-gallium-tin, zinc-gallium-lead,cadmium-gallium-germanium, cadmium-gallium-tin, cadmium-gallium-lead,zinc-indium-germanium, zinc-indium-tin, zinc-indium-lead,cadmium-indium-germanium, cadmium-indium-tin, cadmium-indium-lead; and agate dielectric positioned between the gate electrode and the channel.58. The semiconductor device of claim 57, wherein the metal oxideincludes one or more of zinc-gallium-germanium-oxide,zinc-gallium-tin-oxide, zinc-gallium-lead-oxide,cadmium-gallium-germanium-oxide, cadmium-gallium-tin-oxide,cadmium-gallium-lead-oxide, zinc-indium-germanium-oxide,zinc-indium-tin-oxide, zinc-indium-lead-oxide,cadmium-indium-germanium-oxide, cadmium-indium-tin-oxide,cadmium-indium-lead-oxide.
 59. The semiconductor device of claim 58,wherein the metal oxide includes an atomic composition of A:B:C, whereinA, B, and C are each in a range of about 0.025 to about 0.95.
 60. Thesemiconductor device of claim 57, wherein the metal oxide includes oneor more of zinc-gallium-germanium-tin oxide,cadmium-gallium-germanium-tin oxide, zinc-indium-germanium-tin oxide,cadmium-indium-germanium-tin oxide, zinc-gallium-germanium-lead oxide,cadmium-gallium-germanium-lead oxide, zinc-gallium-tin-lead oxide,cadmium-gallium-tin-lead oxide, zinc-indium-germanium-lead oxide,cadmium-indium-germanium-lead oxide, zinc-indium-tin-lead oxide,cadmium-indium-tin-lead oxide, zinc-gallium-indium-germanium oxide,cadmium-gallium-indium-germanium oxide, zinc-gallium-indium-tin oxide,cadmium-gallium-indium-tin oxide, zinc-gallium-indium-lead oxidecadmium-gallium-indium-lead oxide, zinc-cadmium-gallium-germanium oxide,zinc-cadmium-gallium-tin oxide, zinc-cadmium-gallium-lead oxide,zinc-cadmium-indium-germanium oxide, zinc-cadmium-indium-tin oxide,zinc-cadmium-indium-lead oxide.
 61. The semiconductor device of claim60, wherein the metal oxide includes an atomic composition of A:B:C:D,wherein A, B, C, and D are each in a range of about 0.017 to about 0.95.62. The semiconductor device of claim 57, wherein the metal oxideincludes one or more of zinc-cadmium-gallium-indium-germanium oxide,zinc-cadmium-gallium-indium-tin oxide, zinc-cadmium-gallium-indium-leadoxide, zinc-gallium-germanium-tin-lead oxide,zinc-indium-germanium-tin-lead oxide, cadmium-gallium-germanium-tin-leadoxide, cadmium-indium-germanium-tin-lead oxide,zinc-cadmium-gallium-germanium-tin oxide,zinc-cadmium-indium-germanium-tin oxide,zinc-cadmium-gallium-germanium-lead oxide,zinc-cadmium-indium-germanium-lead oxide, zinc-cadmium-gallium-tin-leadoxide, zinc-cadmium-indium-tin-lead oxide,zinc-gallium-indium-germanium-tin oxide,cadmium-gallium-indium-germanium-tin oxide,zinc-gallium-indium-germanium-lead oxide,cadmium-gallium-indium-germanium-lead oxide,zinc-gallium-indium-tin-lead oxide, cadmium-gallium-indium-tin-leadoxide.
 63. The semiconductor device of claim 62, wherein the metal oxideincludes an atomic composition of A:B:C:D:E, wherein A, B, C, D, and Eare each in a range of about 0.013 to about 0.95.
 64. The semiconductordevice of claim 57, wherein the metal oxide includes one or more ofzinc-cadmium-gallium-indium-germanium-tin oxide,zinc-cadmium-gallium-indium-germanium-lead oxide,zinc-cadmium-gallium-indium-tin-lead oxide,zinc-cadmium-gallium-germanium-tin-lead oxide,zinc-cadmium-indium-germanium-tin-lead oxide,zinc-gallium-indium-germanium-tin-lead oxide,cadmium-gallium-indium-germanium-tin-lead oxide.
 65. The semiconductordevice of claim 64, wherein the metal oxide includes an atomiccomposition of A:B:C:D:E:F, wherein A, B, C, D, E, and F are each in arange of about 0.01 to about 0.95.
 66. The semiconductor device of claim57, wherein the metal oxide includes one or more ofzinc-cadmium-gallium-indium-germanium-tin-lead oxide.
 67. Thesemiconductor device of claim 66, wherein the metal oxide includes anatomic composition of A:B:C:D:E:F:G, wherein A, B, C, D, E, F, and G areeach in a range of about 0.0085 to about 0.95.